Технічний опис APT13003DZTR-G1 Diodes Inc
Description: TRANS NPN 450V 1.5A TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V, Frequency - Transition: 4MHz, Supplier Device Package: TO-92, Part Status: Obsolete, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 1.1 W.
Інші пропозиції APT13003DZTR-G1
| Фото | Назва | Виробник | Інформація |
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APT13003DZTR-G1 | Виробник : Diodes Incorporated |
Description: TRANS NPN 450V 1.5A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 1.1 W |
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APT13003DZTR-G1 | Виробник : Diodes Incorporated |
Description: TRANS NPN 450V 1.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 1.1 W |
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APT13003DZTR-G1 | Виробник : Diodes Incorporated |
 Bipolar Transistors - BJT 250V NPN High Volt 700Vces 450Vceo 1.1W |
товар відсутній |