APT14M120S Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 1200V 14A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 720.77 грн |
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Технічний опис APT14M120S Microchip Technology
Description: MOSFET N-CH 1200V 14A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 25 V.
Інші пропозиції APT14M120S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT14M120S | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Power dissipation: 625W Polarisation: unipolar Kind of package: tube Mounting: SMD Gate charge: 145nC Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 51A Case: D3PAK Drain-source voltage: 1.2kV Drain current: 9A On-state resistance: 1.1Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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APT14M120S | Виробник : Microchip Technology |
MOSFETs MOSFET MOS8 1200 V 14 A TO-268 |
товару немає в наявності |
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APT14M120S | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 9A; Idm: 51A; 625W; D3PAK Power dissipation: 625W Polarisation: unipolar Kind of package: tube Mounting: SMD Gate charge: 145nC Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 51A Case: D3PAK Drain-source voltage: 1.2kV Drain current: 9A On-state resistance: 1.1Ω Type of transistor: N-MOSFET |
товару немає в наявності |