Технічний опис APT150GN60LDQ4G Microchip Technology
Description: IGBT TRENCH FS 600V 220A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A, Supplier Device Package: TO-264 [L], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/430ns, Switching Energy: 8.81mJ (on), 4.295mJ (off), Test Condition: 400V, 150A, 1Ohm, 15V, Gate Charge: 970 nC, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 450 A, Power - Max: 536 W.
Інші пропозиції APT150GN60LDQ4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT150GN60LDQ4G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 600V 220A 536000mW 3-Pin(3+Tab) TO-264 Tube |
товару немає в наявності |
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| APT150GN60LDQ4G | Виробник : MICROCHIP TECHNOLOGY |
APT150GN60LDQ4G THT IGBT transistors |
товару немає в наявності |
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APT150GN60LDQ4G | Виробник : Microchip Technology |
Description: IGBT TRENCH FS 600V 220A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A Supplier Device Package: TO-264 [L] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/430ns Switching Energy: 8.81mJ (on), 4.295mJ (off) Test Condition: 400V, 150A, 1Ohm, 15V Gate Charge: 970 nC Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 450 A Power - Max: 536 W |
товару немає в наявності |
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| APT150GN60LDQ4G | Виробник : Microchip Technology |
IGBT Modules FG, IGBT, 600V, 100A,TO-264, RoHS |
товару немає в наявності |