APT15GN120BDQ1G Microchip Technology
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 506.22 грн |
| 100+ | 431.56 грн |
| 250+ | 365.74 грн |
Товар під замовлення
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термін постачання:
31-40 дні (днів)
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Технічний опис APT15GN120BDQ1G Microchip Technology
Description: IGBT TRENCH FS 1200V 45A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/150ns, Switching Energy: 410µJ (on), 950µJ (off), Test Condition: 800V, 15A, 4.3Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 195 W.
Інші пропозиції APT15GN120BDQ1G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| APT15GN120BDQ1G | Microsemi |
 IGBT 1200V 45A 195W TO247 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
APT15GN120BDQ1G | Microchip Technology |
Description: IGBT TRENCH FS 1200V 45A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/150ns Switching Energy: 410µJ (on), 950µJ (off) Test Condition: 800V, 15A, 4.3Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 195 W |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. |
 |
APT15GN120BDQ1G | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3 Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: TO247-3 Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 195W Gate charge: 90nC |
товару немає в наявності |
В кошику од. на суму грн. |
| APT15GN120BDQ1G |
|
Виробник: Microsemi
IGBT 1200V 45A 195W TO247 Транзистори
IGBT 1200V 45A 195W TO247 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| APT15GN120BDQ1G |
|
Виробник: Microchip Technology
Description: IGBT TRENCH FS 1200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
Description: IGBT TRENCH FS 1200V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| APT15GN120BDQ1G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 195W
Gate charge: 90nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; TO247-3
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: TO247-3
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 195W
Gate charge: 90nC
товару немає в наявності
В кошику
од. на суму грн.