Технічний опис APT15GN120BDQ1G Microchip Technology
Description: IGBT 1200V 45A 195W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/150ns, Switching Energy: 410µJ (on), 950µJ (off), Test Condition: 800V, 15A, 4.3Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 195 W.
Інші пропозиції APT15GN120BDQ1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT15GN120BDQ1G | Виробник : Microsemi |
 IGBT 1200V 45A 195W TO247 Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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APT15GN120BDQ1G | Виробник : Microchip Technology |
Description: IGBT 1200V 45A 195W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/150ns Switching Energy: 410µJ (on), 950µJ (off) Test Condition: 800V, 15A, 4.3Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 195 W |
товару немає в наявності |