APT15GN120SDQ1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK
Power dissipation: 195W
Gate charge: 90nC
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 19ns
Kind of package: tube
Case: D3PAK
Turn-off time: 355ns
Gate-emitter voltage: ±30V
Collector current: 22A
Mounting: SMD
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
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Технічний опис APT15GN120SDQ1G MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors, Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK, Power dissipation: 195W, Gate charge: 90nC, Technology: Field Stop, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 45A, Type of transistor: IGBT, Turn-on time: 19ns, Kind of package: tube, Case: D3PAK, Turn-off time: 355ns, Gate-emitter voltage: ±30V, Collector current: 22A, Mounting: SMD, Collector-emitter voltage: 1.2kV, кількість в упаковці: 1 шт.
Інші пропозиції APT15GN120SDQ1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT15GN120SDQ1G | Виробник : Microchip Technology | Trans IGBT Chip N-CH 1200V 45A 195mW 3-Pin(2+Tab) D3PAK Tube |
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APT15GN120SDQ1G | Виробник : Microchip Technology |
Description: IGBT 1200V 45A 195W TO247 Packaging: Tube Part Status: Active |
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APT15GN120SDQ1G | Виробник : Microchip Technology | IGBT Transistors IGBT Fieldstop Low Frequency Combi 1200 V 15 A TO-268 |
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APT15GN120SDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 22A; 195W; D3PAK Power dissipation: 195W Gate charge: 90nC Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 19ns Kind of package: tube Case: D3PAK Turn-off time: 355ns Gate-emitter voltage: ±30V Collector current: 22A Mounting: SMD Collector-emitter voltage: 1.2kV |
товар відсутній |