APT15GT120BRDQ1G Microchip Technology
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 397.23 грн |
| 100+ | 337.04 грн |
| 250+ | 285.74 грн |
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Технічний опис APT15GT120BRDQ1G Microchip Technology
Description: IGBT 1200V 36A 250W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 10ns/85ns, Switching Energy: 585µJ (on), 260µJ (off), Test Condition: 800V, 15A, 5Ohm, 15V, Gate Charge: 105 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.
Інші пропозиції APT15GT120BRDQ1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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APT15GT120BRDQ1G | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Power dissipation: 250W Gate charge: 105nC Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV кількість в упаковці: 1 шт |
товар відсутній |
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APT15GT120BRDQ1G | Виробник : Microchip Technology |
Description: IGBT 1200V 36A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 10ns/85ns Switching Energy: 585µJ (on), 260µJ (off) Test Condition: 800V, 15A, 5Ohm, 15V Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
товар відсутній |
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APT15GT120BRDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Power dissipation: 250W Gate charge: 105nC Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV |
товар відсутній |