APT15GT120BRDQ1G Microchip Technology
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 435.14 грн |
| 100+ | 369.21 грн |
| 250+ | 313.01 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис APT15GT120BRDQ1G Microchip Technology
Description: IGBT NPT 1200V 36A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 10ns/85ns, Switching Energy: 585µJ (on), 260µJ (off), Test Condition: 800V, 15A, 5Ohm, 15V, Gate Charge: 105 nC, Part Status: Active, Current - Collector (Ic) (Max): 36 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.
Інші пропозиції APT15GT120BRDQ1G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT15GT120BRDQ1G | Microchip Technology |
 Description: IGBT NPT 1200V 36A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 10ns/85ns Switching Energy: 585µJ (on), 260µJ (off) Test Condition: 800V, 15A, 5Ohm, 15V Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
товару немає в наявності |
Мінімальне замовлення: 110 шт В кошику од. на суму грн. |
 |
APT15GT120BRDQ1G | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3 Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 21ns Kind of package: tube Case: TO247-3 Turn-off time: 137ns Gate-emitter voltage: ±30V Part status: Not recommended for new designs Collector current: 18A Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 250W Gate charge: 105nC |
товару немає в наявності |
В кошику од. на суму грн. |
| APT15GT120BRDQ1G |
|
Виробник: Microchip Technology
Description: IGBT NPT 1200V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
Description: IGBT NPT 1200V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 10ns/85ns
Switching Energy: 585µJ (on), 260µJ (off)
Test Condition: 800V, 15A, 5Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
товару немає в наявності
Мінімальне замовлення: 110 шт
В кошику
од. на суму грн.
| APT15GT120BRDQ1G |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 105nC
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 18A; 250W; TO247-3
Technology: NPT
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 21ns
Kind of package: tube
Case: TO247-3
Turn-off time: 137ns
Gate-emitter voltage: ±30V
Part status: Not recommended for new designs
Collector current: 18A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 250W
Gate charge: 105nC
товару немає в наявності
В кошику
од. на суму грн.