APT15GT60KRG Microsemi Corporation
Виробник: Microsemi Corporation
Description: IGBT 600V 42A 184W TO220
Power - Max: 184 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 42 A
Part Status: Obsolete
Gate Charge: 75 nC
Test Condition: 400V, 15A, 10Ohm, 15V
Switching Energy: 150µJ (on), 215µJ (off)
Td (on/off) @ 25°C: 6ns/105ns
IGBT Type: NPT
Supplier Device Package: TO-220 [K]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
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Технічний опис APT15GT60KRG Microsemi Corporation
Description: IGBT 600V 42A 184W TO220, Power - Max: 184 W, Current - Collector Pulsed (Icm): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 42 A, Part Status: Obsolete, Gate Charge: 75 nC, Test Condition: 400V, 15A, 10Ohm, 15V, Switching Energy: 150µJ (on), 215µJ (off), Td (on/off) @ 25°C: 6ns/105ns, IGBT Type: NPT, Supplier Device Package: TO-220 [K], Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ).


