APT19F100J Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 1000V 20A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2421.46 грн |
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Технічний опис APT19F100J Microchip Technology
Description: MOSFET N-CH 1000V 20A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V.
Інші пропозиції APT19F100J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT19F100J | Виробник : Microsemi |
Discrete Semiconductor Modules Power FREDFET - MOS8 |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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| APT19F100J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 120A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 440mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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| APT19F100J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 460W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 120A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 440mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |