Технічний опис APT20M18B2VFRG Microsemi
Description: MOSFET N-CH 200V 100A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V.
Інші пропозиції APT20M18B2VFRG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APT20M18B2VFRG | Виробник : Microchip Technology |
 Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube |
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APT20M18B2VFRG | Виробник : Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube |
товар відсутній |
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| APT20M18B2VFRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT20M18B2VFRG | Виробник : MICROSEMI |
TMAX 3/Trans MOSFET N-CH 200V 100A (3+Tab) APT20M18 кількість в упаковці: 1 шт |
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APT20M18B2VFRG | Виробник : Microchip Technology |
Description: MOSFET N-CH 200V 100A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V |
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| APT20M18B2VFRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
товар відсутній |