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Технічний опис APT20M18LVRG Microsemi
Description: MOSFET N-CH 200V 100A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-264 [L], Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V.
Інші пропозиції APT20M18LVRG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
APT20M18LVRG | Microchip Technology |
 Description: MOSFET N-CH 200V 100A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
| APT20M18LVRG |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.