Технічний опис APT21M100J Microsemi
Description: MOSFET N-CH 1000V 21A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V.
Інші пропозиції APT21M100J
| Фото | Назва | Виробник | Інформація |
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APT21M100J | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 1KV 21A 4-Pin SOT-227 Tube |
товару немає в наявності |
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| APT21M100J | Виробник : MICROCHIP TECHNOLOGY |
APT21M100J Transistor modules MOSFET |
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APT21M100J | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 21A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 16A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
товару немає в наявності |