APT22F120L Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
Description: MOSFET N-CH 1200V 23A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1113.6 грн |
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Технічний опис APT22F120L Microchip Technology
Description: MOSFET N-CH 1200V 23A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V.
Інші пропозиції APT22F120L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT22F120L | Виробник : Microsemi | Discrete Semiconductor Modules Power FREDFET - MOS8 |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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APT22F120L | Виробник : Microchip Technology | Trans MOSFET N-CH Si 1.2KV 23A 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
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APT22F120L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264 Mounting: THT Case: TO264 Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 90A кількість в упаковці: 1 шт |
товар відсутній |
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APT22F120L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW; TO264 Mounting: THT Case: TO264 Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 90A |
товар відсутній |