на замовлення 131 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 698.66 грн |
| 100+ | 593.47 грн |
| 250+ | 505.38 грн |
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Технічний опис APT22F80B Microchip Technology
Description: MOSFET N-CH 800V 23A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V.
Інші пропозиції APT22F80B
| Фото | Назва | Виробник | Інформація |
Доступність |
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APT22F80B | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Drain-source voltage: 800V Drain current: 15A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 85A кількість в упаковці: 1 шт |
товар відсутній |
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APT22F80B | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 23A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4595 pF @ 25 V |
товар відсутній |
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APT22F80B | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 85A; 625W; TO247-3 Mounting: THT Case: TO247-3 Drain-source voltage: 800V Drain current: 15A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 625W Polarisation: unipolar Gate charge: 150nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 85A |
товар відсутній |