Технічний опис APT25GN120B2DQ2G Microchip Technology
Description: IGBT 1200V 67A 272W TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 22ns/280ns, Switching Energy: 2.15µJ (off), Test Condition: 800V, 25A, 4.3Ohm, 15V, Gate Charge: 155 nC, Current - Collector (Ic) (Max): 67 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 272 W.
Інші пропозиції APT25GN120B2DQ2G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT25GN120B2DQ2G | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max Case: T-Max Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A кількість в упаковці: 1 шт |
товар відсутній |
|
| APT25GN120B2DQ2G | Виробник : MICROSEMI |
TMAX/67 A, 1200 V, N-CHANNEL IGBT APT25GN120 кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APT25GN120B2DQ2G | Виробник : Microchip Technology |
Description: IGBT 1200V 67A 272W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 22ns/280ns Switching Energy: 2.15µJ (off) Test Condition: 800V, 25A, 4.3Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 272 W |
товар відсутній |
|
| APT25GN120B2DQ2G | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, T-MAX, RoHS |
товар відсутній |
||
|
|
APT25GN120B2DQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 1.2kV; 33A; 272W; T-Max Case: T-Max Power dissipation: 272W Technology: Field Stop Gate charge: 155nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 39ns Turn-off time: 560ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 75A |
товар відсутній |