Технічний опис APT25GP120BDQ1G Microchip Technology
Description: IGBT 1200V 69A 417W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 12ns/70ns, Switching Energy: 500µJ (on), 440µJ (off), Test Condition: 600V, 25A, 5Ohm, 15V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 69 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 417 W.
Інші пропозиції APT25GP120BDQ1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT25GP120BDQ1G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 69A 417000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
|
 |
APT25GP120BDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 200ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A кількість в упаковці: 1 шт |
товар відсутній |
|
| APT25GP120BDQ1G | Виробник : MICROSEMI |
TO-247/POWER MOS 7 IGBT APT25GP120 кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APT25GP120BDQ1G | Виробник : Microchip Technology |
Description: IGBT 1200V 69A 417W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 12ns/70ns Switching Energy: 500µJ (on), 440µJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 110 nC Current - Collector (Ic) (Max): 69 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 417 W |
товар відсутній |
|
 |
APT25GP120BDQ1G | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS |
товар відсутній |
|
|
|
APT25GP120BDQ1G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 200ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A |
товар відсутній |