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APT25GR120BSCD10 Microchip Technology

Виробник: Microchip Technology
Trans IGBT Chip N-CH 1200V 75A 521W 3-Pin(3+Tab) TO-247 Tube

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Технічний опис APT25GR120BSCD10 Microchip Technology

Description: IGBT 1200V 75A 521W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 434µJ (on), 466µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.

Інші пропозиції APT25GR120BSCD10

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	APT25GR120BSCD10	Виробник : Microsemi Corporation	Description: IGBT 1200V 75A 521W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 434µJ (on), 466µJ (off) Test Condition: 600V, 25A, 4.3Ohm, 15V Gate Charge: 203 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 521 W	товар відсутній