Технічний опис APT25GR120SD15 Microchip Technology
Description: IGBT 1200V 75A 521W D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: D3Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 742µJ (on), 427µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.
Інші пропозиції APT25GR120SD15
| Фото | Назва | Виробник | Інформація |
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APT25GR120SD15 | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 75A 521W 3-Pin(2+Tab) D3PAK Tube |
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APT25GR120SD15 | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Case: D3PAK Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 100A кількість в упаковці: 1 шт |
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APT25GR120SD15 | Виробник : Microchip Technology |
Description: IGBT 1200V 75A 521W D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: D3Pak IGBT Type: NPT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 742µJ (on), 427µJ (off) Test Condition: 600V, 25A, 4.3Ohm, 15V Gate Charge: 203 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 521 W |
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APT25GR120SD15 | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 1200V, 25A, TO-268 |
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APT25GR120SD15 | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; D3PAK Case: D3PAK Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: SMD Collector-emitter voltage: 1.2kV Pulsed collector current: 100A |
товар відсутній |