APT26F120L MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264
Mounting: THT
Pulsed drain current: 105A
Power dissipation: 1135W
Gate charge: 300nC
Polarisation: unipolar
Technology: POWER MOS 8®
Drain current: 16A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO264
On-state resistance: 0.58Ω
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
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Технічний опис APT26F120L MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1200V 27A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V, Power Dissipation (Max): 1135W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V.
Інші пропозиції APT26F120L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APT26F120L | Виробник : MICROSEMI |
TO264/POWER FREDFET - MOS8 APT26F120 кількість в упаковці: 1 шт |
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APT26F120L | Виробник : Microchip Technology |
Description: MOSFET N-CH 1200V 27A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 14A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V |
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APT26F120L | Виробник : Microchip Technology |
MOSFET FG, FREDFET, 1200V, TO-264 |
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APT26F120L | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; Idm: 105A; 1135W; TO264 Mounting: THT Pulsed drain current: 105A Power dissipation: 1135W Gate charge: 300nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 16A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: TO264 On-state resistance: 0.58Ω Gate-source voltage: ±30V |
товар відсутній |