Технічний опис APT26M100JCU2 Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V.
Інші пропозиції APT26M100JCU2
| Фото | Назва | Виробник | Інформація |
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| APT26M100JCU2 | Виробник : MICROSEMI |
 ISOTOP-4/26 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER,MOSFET APT26M100Jкількість в упаковці: 1 шт |
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APT26M100JCU2 | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 26A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V |
товару немає в наявності |
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APT26M100JCU2 | Виробник : Microchip Technology |
Discrete Semiconductor Modules CC0014 |
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| APT26M100JCU2 | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 20A; ISOTOP; screw; Idm: 140A; 543W On-state resistance: 396mΩ Drain current: 20A Power dissipation: 543W Drain-source voltage: 1kV Pulsed drain current: 140A Topology: boost chopper Case: ISOTOP Semiconductor structure: diode/transistor Technology: POWER MOS 8® Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Gate-source voltage: ±30V |
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