APT30DQ120BGVAO Microchip Technology
Виробник: Microchip Technology
Description: DIODE STANDARD 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1200V 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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Технічний опис APT30DQ120BGVAO Microchip Technology
Description: DIODE STANDARD 1200V 30A TO247, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 320 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Qualification: AEC-Q101.
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APT30DQ120BGVAO | Виробник : Microchip Technology |
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