Продукція > MICROSEMI CORPORATION > APT30GT60KRG
APT30GT60KRG

APT30GT60KRG Microsemi Corporation

APT30GT60KR%28G%29.pdf Виробник: Microsemi Corporation
Description: IGBT 600V 64A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-220 [K]
IGBT Type: NPT
Td (on/off) @ 25°C: 12ns/225ns
Switching Energy: 525µJ (on), 600µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 250 W
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис APT30GT60KRG Microsemi Corporation

Description: IGBT 600V 64A 250W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Supplier Device Package: TO-220 [K], IGBT Type: NPT, Td (on/off) @ 25°C: 12ns/225ns, Switching Energy: 525µJ (on), 600µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 110 A, Power - Max: 250 W.