Технічний опис APT30M19JVR Microchip Technology
Description: MOSFET N-CH 300V 130A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V.
Інші пропозиції APT30M19JVR
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APT30M19JVR | Виробник : Microchip Technology |
 Trans MOSFET N-CH 300V 130A 4-Pin SOT-227 Tube |
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| APT30M19JVR | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 520A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT30M19JVR | Виробник : Microchip Technology |
Description: MOSFET N-CH 300V 130A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 975 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21600 pF @ 25 V |
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APT30M19JVR | Виробник : Microchip Technology |
Discrete Semiconductor Modules MOSFET MOS5 300 V 19 mOhm SOT-227 |
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| APT30M19JVR | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 520A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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