APT34N80B2C3G MICROSEMI
Виробник: MICROSEMI
TMAX-3/34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET APT34N80B
кількість в упаковці: 1 шт
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Технічний опис APT34N80B2C3G MICROSEMI
Description: MOSFET N-CH 800V 34A T-MAX, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 3.9V @ 2mA, Power Dissipation (Max): 417W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc).
Інші пропозиції APT34N80B2C3G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
APT34N80B2C3G | Microchip Technology |
Description: MOSFET N-CH 800V 34A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 3.9V @ 2mA Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
APT34N80B2C3G | Microchip Technology |
MOSFETs MOSFET COOLMOS 800 V 34 A TO-247 MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| APT34N80B2C3G |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 800V 34A T-MAX
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Description: MOSFET N-CH 800V 34A T-MAX
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| APT34N80B2C3G |
|
Виробник: Microchip Technology
MOSFETs MOSFET COOLMOS 800 V 34 A TO-247 MAX
MOSFETs MOSFET COOLMOS 800 V 34 A TO-247 MAX
товару немає в наявності
В кошику
од. на суму грн.