Технічний опис APT34N80B2C3G Microchip Technology
Description: MOSFET N-CH 800V 34A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V.
Інші пропозиції APT34N80B2C3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT34N80B2C3G | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
| APT34N80B2C3G | Виробник : MICROSEMI |
TMAX-3/34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET APT34N80B кількість в упаковці: 1 шт |
товар відсутній |
||
 |
APT34N80B2C3G | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 34A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V |
товар відсутній |
|
 |
APT34N80B2C3G | Виробник : Microchip Technology |
MOSFET MOSFET COOLMOS 800 V 34 A TO-247 MAX |
товар відсутній |
|
| APT34N80B2C3G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 34A; Idm: 102A; 417W; TO247MAX Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 34A Pulsed drain current: 102A Power dissipation: 417W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 355nC Kind of channel: enhanced |
товар відсутній |