Технічний опис APT34N80B2C3G Microchip Technology
Description: MOSFET N-CH 800V 34A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V.
Інші пропозиції APT34N80B2C3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APT34N80B2C3G | Виробник : MICROSEMI |
 TMAX-3/34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET APT34N80Bкількість в упаковці: 1 шт |
товару немає в наявності |
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APT34N80B2C3G | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 34A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 22A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V |
товару немає в наявності |
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APT34N80B2C3G | Виробник : Microchip Technology |
MOSFETs MOSFET COOLMOS 800 V 34 A TO-247 MAX |
товару немає в наявності |