Технічний опис APT35GN120L2DQ2G Microchip Technology
Description: IGBT 1200V 94A 379W TO264, Power - Max: 379 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 94 A, Part Status: Active, Gate Charge: 220 nC, Test Condition: 800V, 35A, 2.2Ohm, 15V, Switching Energy: 2.315mJ (off), Td (on/off) @ 25°C: 24ns/300ns, IGBT Type: NPT, Trench Field Stop, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.
Інші пропозиції APT35GN120L2DQ2G за ціною від 773.78 грн до 874.94 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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APT35GN120L2DQ2G | Microchip Technology |
 Description: IGBT 1200V 94A 379W TO264Power - Max: 379 W Current - Collector Pulsed (Icm): 105 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 94 A Part Status: Active Gate Charge: 220 nC Test Condition: 800V, 35A, 2.2Ohm, 15V Switching Energy: 2.315mJ (off) Td (on/off) @ 25°C: 24ns/300ns IGBT Type: NPT, Trench Field Stop Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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APT35GN120L2DQ2G | Microchip Technology / Atmel |
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS |
на замовлення 76 шт: термін постачання 605-614 дні (днів) |
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| APT35GN120L2DQ2G |
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Виробник: Microchip Technology
Description: IGBT 1200V 94A 379W TO264
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: IGBT 1200V 94A 379W TO264
Power - Max: 379 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 94 A
Part Status: Active
Gate Charge: 220 nC
Test Condition: 800V, 35A, 2.2Ohm, 15V
Switching Energy: 2.315mJ (off)
Td (on/off) @ 25°C: 24ns/300ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 773.78 грн |
| APT35GN120L2DQ2G |
|
Виробник: Microchip Technology / Atmel
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
на замовлення 76 шт:
термін постачання 605-614 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 874.94 грн |