APT35GP120B2D2G Microchip Technology
Виробник: Microchip Technology
Description: IGBT PT 1200V 96A TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/99ns
Switching Energy: 1mJ (on), 1.185mJ (off)
Test Condition: 800V, 35A, 5Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 540 W
Description: IGBT PT 1200V 96A TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Supplier Device Package: T-MAX™ [B2]
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/99ns
Switching Energy: 1mJ (on), 1.185mJ (off)
Test Condition: 800V, 35A, 5Ohm, 15V
Gate Charge: 150 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 540 W
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1271.8 грн |
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Технічний опис APT35GP120B2D2G Microchip Technology
Description: IGBT PT 1200V 96A TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A, Supplier Device Package: T-MAX™ [B2], IGBT Type: PT, Td (on/off) @ 25°C: 14ns/99ns, Switching Energy: 1mJ (on), 1.185mJ (off), Test Condition: 800V, 35A, 5Ohm, 15V, Gate Charge: 150 nC, Part Status: Active, Current - Collector (Ic) (Max): 96 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 140 A, Power - Max: 540 W.
Інші пропозиції APT35GP120B2D2G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT35GP120B2D2G | Виробник : Microchip Technology | IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX |
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| APT35GP120B2D2G | Виробник : MICROCHIP (MICROSEMI) | APT35GP120B2D2G THT IGBT transistors |
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APT35GP120B2D2G | Виробник : Microchip Technology |
 IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX |
товар відсутній |