APT40GP60B2DQ2G Microchip Technology
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 949.46 грн |
100+ | 809.21 грн |
250+ | 686.31 грн |
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Технічний опис APT40GP60B2DQ2G Microchip Technology
Description: IGBT 600V 100A 543W TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/64ns, Switching Energy: 385µJ (on), 350µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 135 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 543 W.
Інші пропозиції APT40GP60B2DQ2G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT40GP60B2DQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max Mounting: THT Case: T-Max Gate charge: 135nC Collector-emitter voltage: 600V Collector current: 62A Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 49ns Turn-off time: 160ns Power dissipation: 543W Type of transistor: IGBT |
товар відсутній |
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APT40GP60B2DQ2G | Виробник : Microchip Technology |
Description: IGBT 600V 100A 543W TMAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A IGBT Type: PT Td (on/off) @ 25°C: 20ns/64ns Switching Energy: 385µJ (on), 350µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 543 W |
товар відсутній |
||
APT40GP60B2DQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max Mounting: THT Case: T-Max Gate charge: 135nC Collector-emitter voltage: 600V Collector current: 62A Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 49ns Turn-off time: 160ns Power dissipation: 543W Type of transistor: IGBT |
товар відсутній |