Технічний опис APT40GP60BG Microchip Technology
Description: IGBT PT 600V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 20ns/64ns, Switching Energy: 385µJ (on), 352µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 135 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 543 W.
Інші пропозиції APT40GP60BG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT40GP60BG | Виробник : MICROSEMI |
 TO247/INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE APT40GP60кількість в упаковці: 1 шт |
товару немає в наявності |
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APT40GP60BG | Виробник : Microchip Technology |
Description: IGBT PT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 20ns/64ns Switching Energy: 385µJ (on), 352µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 543 W |
товару немає в наявності |
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| APT40GP60BG | Виробник : Microchip Technology |
IGBTs IGBT PT MOS 7 Single 600 V 40 A TO-247 |
товару немає в наявності |