Технічний опис APT40GP60SG Microchip Technology
Description: IGBT PT 600V 100A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Supplier Device Package: D3Pak, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/64ns, Switching Energy: 385µJ (on), 352µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 135 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 543 W.
Інші пропозиції APT40GP60SG
| Фото | Назва | Виробник | Інформація |
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APT40GP60SG | Виробник : Microsemi Corporation |
 Description: IGBT PT 600V 100A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: D3Pak IGBT Type: PT Td (on/off) @ 25°C: 20ns/64ns Switching Energy: 385µJ (on), 352µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 543 W |
товару немає в наявності |
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| APT40GP60SG | Виробник : Microchip / Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single |
товару немає в наявності |