APT41M80B2 MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW
Case: TO247MAX
Drain current: 27A
Kind of channel: enhanced
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 0.21Ω
Gate-source voltage: ±30V
Mounting: THT
Pulsed drain current: 150A
Power dissipation: 1.04kW
Gate charge: 260nC
Polarisation: unipolar
Technology: POWER MOS 8®
кількість в упаковці: 1 шт
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Технічний опис APT41M80B2 MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 800V 43A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V.
Інші пропозиції APT41M80B2
| Фото | Назва | Виробник | Інформація |
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APT41M80B2 | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 43A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V |
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| APT41M80B2 | Виробник : Microchip Technology |
Discrete Semiconductor Modules FG, MOSFET, 800V, TO-247 T-MAX |
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| APT41M80B2 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 27A; Idm: 150A; 1.04kW Case: TO247MAX Drain current: 27A Kind of channel: enhanced Drain-source voltage: 800V Type of transistor: N-MOSFET On-state resistance: 0.21Ω Gate-source voltage: ±30V Mounting: THT Pulsed drain current: 150A Power dissipation: 1.04kW Gate charge: 260nC Polarisation: unipolar Technology: POWER MOS 8® |
товар відсутній |