Технічний опис APT42F50S Microchip Technology
Description: MOSFET N-CH 500V 42A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V.
Інші пропозиції APT42F50S
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APT42F50S | Виробник : Microchip Technology |
 Trans MOSFET N-CH Si 500V 42A 3-Pin(2+Tab) D3PAK Tube |
товару немає в наявності |
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| APT42F50S | Виробник : MICROCHIP TECHNOLOGY |
APT42F50S SMD N channel transistors |
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APT42F50S | Виробник : Microchip Technology |
Description: MOSFET N-CH 500V 42A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 25 V |
товару немає в наявності |
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APT42F50S | Виробник : Microchip Technology |
MOSFETs FREDFET MOS8 500 V 42 A TO-268 |
товару немає в наявності |