APT45GP120JDQ2 MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B
Case: SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 34A
Pulsed collector current: 170A
Power dissipation: 329W
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис APT45GP120JDQ2 MICROCHIP TECHNOLOGY
Description: IGBT MOD 1200V 75A 329W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 329 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 4 nF @ 25 V.
Інші пропозиції APT45GP120JDQ2
| Фото | Назва | Виробник | Інформація |
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Ціна |
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APT45GP120JDQ2 | Виробник : Microchip Technology |
Description: IGBT MOD 1200V 75A 329W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 329 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 4 nF @ 25 V |
товару немає в наявності |
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APT45GP120JDQ2 | Виробник : Microchip Technology |
IGBTs IGBT PT MOS 7 Combi 1200 V 45 A SOT-227 |
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APT45GP120JDQ2 | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® |
товару немає в наявності |