APT45GR65B MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: THT IGBT transistors
Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3
Mounting: THT
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 56A
Pulsed collector current: 224A
Turn-on time: 47ns
Turn-off time: 175ns
Type of transistor: IGBT
Power dissipation: 543W
Kind of package: tube
Gate charge: 150nC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
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Технічний опис APT45GR65B MICROCHIP TECHNOLOGY
Description: IGBT NPT 650V 92A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 15ns/100ns, Switching Energy: 900µJ (on), 580µJ (off), Test Condition: 433V, 45A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 92 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 168 A, Power - Max: 357 W.
Інші пропозиції APT45GR65B
| Фото | Назва | Виробник | Інформація |
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APT45GR65B | Виробник : Microchip Technology |
Description: IGBT NPT 650V 92A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 15ns/100ns Switching Energy: 900µJ (on), 580µJ (off) Test Condition: 433V, 45A, 4.3Ohm, 15V Gate Charge: 203 nC Part Status: Active Current - Collector (Ic) (Max): 92 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 168 A Power - Max: 357 W |
товару немає в наявності |
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APT45GR65B | Виробник : Microchip Technology |
IGBT Transistors IGBT MOS 8 650 V 45 A TO-247 |
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APT45GR65B | Виробник : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 56A Pulsed collector current: 224A Turn-on time: 47ns Turn-off time: 175ns Type of transistor: IGBT Power dissipation: 543W Kind of package: tube Gate charge: 150nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs |
товару немає в наявності |