Технічний опис APT45GR65B MICROCHIP TECHNOLOGY
Description: IGBT NPT 650V 92A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 15ns/100ns, Switching Energy: 900µJ (on), 580µJ (off), Test Condition: 433V, 45A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 92 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 168 A, Power - Max: 357 W.
Інші пропозиції APT45GR65B
| Фото | Назва | Виробник | Інформація |
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APT45GR65B | Виробник : Microchip Technology |
 Description: IGBT NPT 650V 92A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 15ns/100ns Switching Energy: 900µJ (on), 580µJ (off) Test Condition: 433V, 45A, 4.3Ohm, 15V Gate Charge: 203 nC Part Status: Active Current - Collector (Ic) (Max): 92 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 168 A Power - Max: 357 W |
товару немає в наявності |
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APT45GR65B | Виробник : Microchip Technology |
IGBT Transistors IGBT MOS 8 650 V 45 A TO-247 |
товару немає в наявності |