APT45GR65B Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT NPT 650V 92A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/100ns
Switching Energy: 900µJ (on), 580µJ (off)
Test Condition: 433V, 45A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 357 W
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Технічний опис APT45GR65B Microchip Technology
Description: IGBT NPT 650V 92A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 15ns/100ns, Switching Energy: 900µJ (on), 580µJ (off), Test Condition: 433V, 45A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 92 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 168 A, Power - Max: 357 W.
Інші пропозиції APT45GR65B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT45GR65B | Виробник : Microchip Technology |
IGBT Transistors IGBT MOS 8 650 V 45 A TO-247 |
товару немає в наявності |
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APT45GR65B | Виробник : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 650V; 56A; 543W; TO247-3 Type of transistor: IGBT Technology: NPT; POWER MOS 8® Collector-emitter voltage: 650V Collector current: 56A Power dissipation: 543W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 224A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 47ns Turn-off time: 175ns Part status: Not recommended for new designs |
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