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APT45M100J Microsemi

Виробник: Microsemi
IGBT Transistors Power MOSFET - MOS8

на замовлення 10 шт:

термін постачання 21-30 дні (днів)

В кошику од. на суму грн.

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Технічний опис APT45M100J Microsemi

Description: MOSFET N-CH 1000V 45A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V.

Інші пропозиції APT45M100J

Назва	Виробник	Інформація	Доступність	Ціна
APT45M100J	Виробник : MICROCHIP TECHNOLOGY	Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.18Ω Power dissipation: 960W Polarisation: unipolar Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 260A кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
APT45M100J	Виробник : Microchip Technology	Description: MOSFET N-CH 1000V 45A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.
APT45M100J	Виробник : MICROCHIP TECHNOLOGY	Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 28A; ISOTOP; screw; Idm: 260A; 960W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.18Ω Power dissipation: 960W Polarisation: unipolar Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 260A	товару немає в наявності	В кошику од. на суму грн.