APT47GA60JD40 MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B; tube
Technology: POWER MOS 8®; PT
Gate-emitter voltage: ±30V
Collector current: 47A
Pulsed collector current: 139A
Max. off-state voltage: 0.6kV
Application: for UPS
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис APT47GA60JD40 MICROCHIP TECHNOLOGY
Description: IGBT 600V 87A 283W SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 87 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 283 W, Current - Collector Cutoff (Max): 275 µA, Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V.
Інші пропозиції APT47GA60JD40
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT47GA60JD40 | Виробник : Microchip Technology |
Description: IGBT 600V 87A 283W SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 87 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 283 W Current - Collector Cutoff (Max): 275 µA Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V |
товару немає в наявності |
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APT47GA60JD40 | Виробник : Microchip Technology |
IGBT Modules IGBT PT MOS 8 Combi 600 V 47 A ISOTOP |
товару немає в наявності |
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| APT47GA60JD40 | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B; tube Technology: POWER MOS 8®; PT Gate-emitter voltage: ±30V Collector current: 47A Pulsed collector current: 139A Max. off-state voltage: 0.6kV Application: for UPS Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Semiconductor structure: single transistor Type of semiconductor module: IGBT |
товару немає в наявності |