APT47N60SC3G Microchip Technology
на замовлення 47 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1162.13 грн |
| 250+ | 989.01 грн |
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Технічний опис APT47N60SC3G Microchip Technology
Description: MOSFET N-CH 600V 47A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V.
Інші пропозиції APT47N60SC3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT47N60SC3G | Виробник : Microchip Technology |
 Trans MOSFET N-CH 600V 47A 3-Pin(2+Tab) D3PAK Tube |
товару немає в наявності |
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APT47N60SC3G | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ кількість в упаковці: 1 шт |
товару немає в наявності |
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APT47N60SC3G | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 47A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
товару немає в наявності |
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APT47N60SC3G | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |