Технічний опис APT47N65BC3G Microchip Technology
Description: MOSFET N-CH 650V 47A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V.
Інші пропозиції APT47N65BC3G
| Фото | Назва | Виробник | Інформація |
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APT47N65BC3G | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
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