APT48M80B2 Microchip Technology

Description: MOSFET N-CH 800V 49A T-MAX, Input Capacitance (Ciss) (Max) @ Vds: 9330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: T-MAX™ [B2], Vgs(th) (Max) @ Id: 5V @ 2.5mA, Power Dissipation (Max): 1135W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.