Технічний опис APT4F120K Microchip Technology
Description: MOSFET N-CH 1200V 4A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 500µA, Power Dissipation (Max): 225W (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції APT4F120K
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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APT4F120K | Microchip Technology |
 Description: MOSFET N-CH 1200V 4A TO220Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 500µA Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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| APT4F120K |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 1200V 4A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 500µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.