Технічний опис APT5014BLLG Microchip Technology
Description: MOSFET N-CH 500V 35A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V.
Інші пропозиції APT5014BLLG
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APT5014BLLG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 500V 35A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V |
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APT5014BLLG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 500 V 14 Ohm TO-247 |
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APT5014BLLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 72nC On-state resistance: 0.14Ω Gate-source voltage: ±30V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Drain-source voltage: 500V Kind of channel: enhancement |
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