Технічний опис APT50GN120B2G MICROSEMI
Description: IGBT NPT FIELD STOP 1200V 134A, Power - Max: 543 W, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 134 A, Part Status: Active, Gate Charge: 315 nC, Test Condition: 800V, 50A, 2.2Ohm, 15V, Switching Energy: 4495µJ (off), Td (on/off) @ 25°C: 28ns/320ns, IGBT Type: NPT, Trench Field Stop, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
Інші пропозиції APT50GN120B2G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
APT50GN120B2G | Microchip Technology |
 Description: IGBT NPT FIELD STOP 1200V 134APower - Max: 543 W Current - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 134 A Part Status: Active Gate Charge: 315 nC Test Condition: 800V, 50A, 2.2Ohm, 15V Switching Energy: 4495µJ (off) Td (on/off) @ 25°C: 28ns/320ns IGBT Type: NPT, Trench Field Stop Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| APT50GN120B2G | Microchip Technology |
IGBTs IGBT Fieldstop Low Frequency Single 1200 V 50 A TO-247 MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| APT50GN120B2G |
|
Виробник: Microchip Technology
Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: IGBT NPT FIELD STOP 1200V 134A
Power - Max: 543 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 134 A
Part Status: Active
Gate Charge: 315 nC
Test Condition: 800V, 50A, 2.2Ohm, 15V
Switching Energy: 4495µJ (off)
Td (on/off) @ 25°C: 28ns/320ns
IGBT Type: NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| APT50GN120B2G |
|
Виробник: Microchip Technology
IGBTs IGBT Fieldstop Low Frequency Single 1200 V 50 A TO-247 MAX
IGBTs IGBT Fieldstop Low Frequency Single 1200 V 50 A TO-247 MAX
товару немає в наявності
В кошику
од. на суму грн.