Технічний опис APT50GR120JD30 Microchip Technology
Description: IGBT MOD 1200V 84A 417W SOT227, Packaging: Tube, Package / Case: SOT-227-4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: NPT, Current - Collector (Ic) (Max): 84 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 417 W, Current - Collector Cutoff (Max): 1.1 mA, Input Capacitance (Cies) @ Vce: 5.55 nF @ 25 V.
Інші пропозиції APT50GR120JD30
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT50GR120JD30 | Виробник : Microchip Technology |
 Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube |
товару немає в наявності |
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APT50GR120JD30 | Виробник : Microchip Technology |
Trans IGBT Module N-CH 1200V 84A 417W 4-Pin SOT-227 Tube |
товару немає в наявності |
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| APT50GR120JD30 | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B кількість в упаковці: 1 шт |
товару немає в наявності |
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APT50GR120JD30 | Виробник : Microchip Technology |
Description: IGBT MOD 1200V 84A 417W SOT227 Packaging: Tube Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Current - Collector (Ic) (Max): 84 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 417 W Current - Collector Cutoff (Max): 1.1 mA Input Capacitance (Cies) @ Vce: 5.55 nF @ 25 V |
товару немає в наявності |
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| APT50GR120JD30 | Виробник : Microchip Technology |
IGBTs IGBT MOS 8 1200 V 50 A SOT-227 |
товару немає в наявності |
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| APT50GR120JD30 | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B |
товару немає в наявності |