Технічний опис APT50GR120L Microchip Technology
Description: IGBT NPT 1200V 117A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A, Supplier Device Package: TO-264, IGBT Type: NPT, Td (on/off) @ 25°C: 28ns/237ns, Switching Energy: 2.14mJ (on), 1.48mJ (off), Test Condition: 600V, 50A, 4.3Ohm, 15V, Gate Charge: 445 nC, Current - Collector (Ic) (Max): 117 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 694 W.
Інші пропозиції APT50GR120L
| Фото | Назва | Виробник | Інформація |
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APT50GR120L | Виробник : Microchip Technology |
 Description: IGBT NPT 1200V 117A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Supplier Device Package: TO-264 IGBT Type: NPT Td (on/off) @ 25°C: 28ns/237ns Switching Energy: 2.14mJ (on), 1.48mJ (off) Test Condition: 600V, 50A, 4.3Ohm, 15V Gate Charge: 445 nC Current - Collector (Ic) (Max): 117 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 694 W |
товару немає в наявності |
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| APT50GR120L | Виробник : Microchip Technology |
IGBTs IGBT MOS 8 1200 V 50 A TO-264 |
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APT50GR120L | Виробник : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Case: TO264 Mounting: THT Type of transistor: IGBT Technology: NPT; POWER MOS 8® Kind of package: tube Turn-on time: 66ns Gate charge: 330nC Turn-off time: 324ns Collector current: 50A Gate-emitter voltage: ±30V Pulsed collector current: 200A Power dissipation: 694W Collector-emitter voltage: 1.2kV |
товару немає в наявності |