Технічний опис APT50GT120LRDQ2G Microchip Technology
Description: IGBT NPT 1200V 106A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, Supplier Device Package: TO-264 [L], IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/215ns, Switching Energy: 2585µJ (on), 1910µJ (off), Test Condition: 800V, 50A, 1Ohm, 15V, Gate Charge: 240 nC, Current - Collector (Ic) (Max): 106 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 694 W.
Інші пропозиції APT50GT120LRDQ2G
| Фото | Назва | Виробник | Інформація |
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APT50GT120LRDQ2G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 106A 694W 3-Pin(3+Tab) TO-264 Tube |
товару немає в наявності |
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| APT50GT120LRDQ2G | Виробник : MICROCHIP TECHNOLOGY |
APT50GT120LRDQ2G THT IGBT transistors |
товару немає в наявності |
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APT50GT120LRDQ2G | Виробник : Microchip Technology |
Description: IGBT NPT 1200V 106A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Supplier Device Package: TO-264 [L] IGBT Type: NPT Td (on/off) @ 25°C: 23ns/215ns Switching Energy: 2585µJ (on), 1910µJ (off) Test Condition: 800V, 50A, 1Ohm, 15V Gate Charge: 240 nC Current - Collector (Ic) (Max): 106 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 694 W |
товару немає в наявності |
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| APT50GT120LRDQ2G | Виробник : Microchip Technology |
IGBTs IGBT NPT Medium Frequency Combi 1200 V 50 A TO-264 |
товару немає в наявності |