Технічний опис APT53N60BC6 Microchip Technology
Description: MOSFET N-CH 600V 53A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.72mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V.
Інші пропозиції APT53N60BC6
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APT53N60BC6 | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 417W Case: TO247 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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APT53N60BC6 | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 53A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V |
товару немає в наявності |
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APT53N60BC6 | Виробник : Microchip Technology |
MOSFETs MOSFET COOLMOS 600 V 53 A TO-247 |
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APT53N60BC6 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 417W; TO247 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Power dissipation: 417W Case: TO247 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 154nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |