Технічний опис APT6010B2LLG Microchip Technology
Description: MOSFET N-CH 600V 54A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V.
Інші пропозиції APT6010B2LLG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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APT6010B2LLG | Виробник : Microchip Technology |
 Trans MOSFET N-CH 600V 54A 3-Pin(3+Tab) T-MAX Tube |
товару немає в наявності |
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| APT6010B2LLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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APT6010B2LLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 54A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
товару немає в наявності |
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APT6010B2LLG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 600 V 10 Ohm TO-247 MAX |
товару немає в наявності |
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| APT6010B2LLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |