Технічний опис APT6013B2LLG Microchip Technology
Description: MOSFET N-CH 600V 43A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V.
Інші пропозиції APT6013B2LLG
| Фото | Назва | Виробник | Інформація |
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| APT6013B2LLG | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 43A; Idm: 172A; 565W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 43A Pulsed drain current: 172A Power dissipation: 565W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 130nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT6013B2LLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 43A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V |
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APT6013B2LLG | Виробник : Microchip Technology |
MOSFET FG, MOSFET, 600V, 0.13_OHM, TO-247 T-MAX, RoHS |
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| APT6013B2LLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 43A; Idm: 172A; 565W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 43A Pulsed drain current: 172A Power dissipation: 565W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 130nC Kind of channel: enhanced |
товар відсутній |