APT60D30BG Microsemi Corporation
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 300V 60A TO247
Current - Reverse Leakage @ Vr: 250 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 38 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Відгуки про товар
Написати відгук
Технічний опис APT60D30BG Microsemi Corporation
Description: DIODE GEN PURP 300V 60A TO247, Current - Reverse Leakage @ Vr: 250 µA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 300 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io): 60A, Technology: Standard, Reverse Recovery Time (trr): 38 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.