APT60M60JLL Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 7159.32 грн |
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Технічний опис APT60M60JLL Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V.
Інші пропозиції APT60M60JLL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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APT60M60JLL | Виробник : Microchip Technology |
Trans MOSFET N-CH 600V 70A 4-Pin SOT-227 |
товару немає в наявності |
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| APT60M60JLL | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 280A; 694W Drain-source voltage: 600V Drain current: 70A On-state resistance: 60mΩ Power dissipation: 694W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 280A Semiconductor structure: single transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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| APT60M60JLL | Виробник : Microsemi |
Discrete Semiconductor Modules Power MOSFET - MOS7 |
товару немає в наявності |
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| APT60M60JLL | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 70A; ISOTOP; screw; Idm: 280A; 694W Drain-source voltage: 600V Drain current: 70A On-state resistance: 60mΩ Power dissipation: 694W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 280A Semiconductor structure: single transistor |
товару немає в наявності |