APT64GA90B2D30 MICROSEMI
Виробник: MICROSEMI
TO247/INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - COMBI APT64GA90B2
кількість в упаковці: 1 шт
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Технічний опис APT64GA90B2D30 MICROSEMI
Description: IGBT PT 900V 117A TO247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/131ns, Switching Energy: 1192µJ (on), 1088µJ (off), Test Condition: 600V, 38A, 4.7Ohm, 15V, Gate Charge: 162 nC, Part Status: Active, Current - Collector (Ic) (Max): 117 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 193 A, Power - Max: 500 W.
Інші пропозиції APT64GA90B2D30
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT64GA90B2D30 | Microchip Technology |
Description: IGBT PT 900V 117A TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A IGBT Type: PT Td (on/off) @ 25°C: 18ns/131ns Switching Energy: 1192µJ (on), 1088µJ (off) Test Condition: 600V, 38A, 4.7Ohm, 15V Gate Charge: 162 nC Part Status: Active Current - Collector (Ic) (Max): 117 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 193 A Power - Max: 500 W |
товару немає в наявності |
В кошику од. на суму грн. |
| APT64GA90B2D30 | Microchip Technology |
IGBTs IGBT PT MOS 8 Combi 900 V 64 A TO-247 MAX |
товару немає в наявності |
В кошику од. на суму грн. |
| APT64GA90B2D30 |
|
Виробник: Microchip Technology
Description: IGBT PT 900V 117A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
Description: IGBT PT 900V 117A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
товару немає в наявності
В кошику
од. на суму грн.
| APT64GA90B2D30 |
|
Виробник: Microchip Technology
IGBTs IGBT PT MOS 8 Combi 900 V 64 A TO-247 MAX
IGBTs IGBT PT MOS 8 Combi 900 V 64 A TO-247 MAX
товару немає в наявності
В кошику
од. на суму грн.