Технічний опис APT65GP60JDQ2 MICROSEMI
Description: IGBT 600V 130A 431W SOT227, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 431 W, Current - Collector Cutoff (Max): 1.25 mA, Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V.
Інші пропозиції APT65GP60JDQ2
| Фото | Назва | Виробник | Інформація |
Доступність |
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APT65GP60JDQ2 | Виробник : Microchip Technology |
 Description: IGBT 600V 130A 431W SOT227Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 431 W Current - Collector Cutoff (Max): 1.25 mA Input Capacitance (Cies) @ Vce: 7.4 nF @ 25 V |
товару немає в наявності |
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| APT65GP60JDQ2 | Виробник : Microchip Technology |
IGBT Modules IGBT PT MOS 7 Combi 600 V 65 A SOT-227 |
товару немає в наявності |
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| APT65GP60JDQ2 | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Kind of package: tube Max. off-state voltage: 0.6kV Technology: POWER MOS 7®; PT Type of semiconductor module: IGBT Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
товару немає в наявності |